GaN Based Flip-Chip Power Blue LED Chip 

Product NO.: APT-A1801A-A□3□□□□□□C

 Advanced Packaging Technology Ltd.(APT) is a professional LED chip manufacturer and supplier. APT supplies GaN-based LED chips, from tranditional small size LED chips to power LED chips and multi-chip LED module based on Flip-Chip Technology. APT owns independent intellectual property, which covers the core technology of power LED design and processing, and the know-how of  scalable multi-chip LED module manufacturing.

  1.  FEATURES                 APPLICATIONS  

Flip-chip Technology              General Illumination Ultra High Brightness             Street Lighting High Lighting Efficiency          Backlighting Unit Excellent Thermal Managemen       Flashlight High Reliability                  Traffic Light Friendly LED Packaging            Special Lighting   2.  Chip Specifications (1)  Chip Diagram Side View Bottom View Chip Description   Material Mechanical Spccification Substrate Sapphire Bond Pad Thickness 1μm Epitaxial Layer GaN Pad Shape Triangle Interposer Si Chip Size 490μm×490μm Bond Pad Al Interposer Size 856μm×856μm Solder joint Gold Bump Chip thickness 85±5μm Solder Bump Interposer thickness 250±5μm     Total Thickness 360±10μm  (2)  Maximum Ratings at TA=25℃Note 1 Item Symbol APT-A1801AA□3□□□□□□C   DC Forward Current IF 120mA Peak Forward Current(1/10 duty cycle @1KHz) IFP 300mA Maximam LED Junction Temperature Tj 125℃ Reverse Voltage VR 5V Operating Temperature Range Topr -40℃to+85℃ Storage Temperature Range Tstg -40℃to+100℃ Electrostatic Discharge Threshold(HBM)Note2 ESDHBM 3000-6000V Electrostatic Discharge Classification (JESD22-A114-B)Note2 ESDLevel Class3 (3)Typical Electrical/Optical Characteristics at TA=25℃,IF=120mA Item Symbol Condition Min Max Unit Forward Voltage(Vf, V) VF IF=120mA 2.8 3.8 V Dominant Wavelength (WLD, nm)＊ λd 455 475 nm Radiant Flux(mW) IV 20 50 mW             ＊ WLD is sorted by 2.5 nm/Bin .   3.Product NO. Specification Solder Joint Dominant Wavelength(λd,nm) Forward Voltage(Vf,V) Radiant Flux(mw) APT-A1801AA□3□□□□□□C           APT-A1801AA□3□□□□□□C APT-A1801AA□3□□□□□□C            APT-A1801AA□3□□□□□□C                   4.Reliability Test items Test item Test condition Duration Results High temperature Operation Lifetime T=50℃ IF=120mA 1000 hours Note3 Room Temperature Operation Lifetime T=25℃ IF=120mA 1000 hours Note3 High Temperature Storage ～110℃ non operating 1000 hours Note3 Low Temperature Storage ～-40℃ non operating 1000 hours Note3 High Temperature/Humidity 85℃/85%RH@120mA 1000 hours Note3 Thermal Cycle Test JESD22-A104-B Condition G,125℃～-40℃ 200 cycles Note4 Natural Drop Test On concrete from 1.2m 3 times Note4 Shear Test Solder Bump \ ＞60MPa Gold Bump \ ＞70MPa Notes: ①  Maximum ratings are package dependent. The above ratings were acquired after packaged      with Dome Power Leadframe and Aluminum Substrate used for heat dissipation,no epoxy or      silica gel encapsulant used.Ratings for other packaging maybe differ. The chip junction      temperature should be characterized in a specific packaging to determine limitations.       Assembly processing temperature must not exceed 260℃(＜3 seconds). ②  Product resistance to electrostatic discharge (ESD) according to the HBM is measured by      simulating ESD using a rapid avalanche energy test (RAET). The RATE procedures are designed      to approximate the max ESD ratings shown.The RAET procedure is performed on each die.      The ESD classification of Class 3A is based on standard JESD22-A114-B ③  Maximum 10% degradation of initial luminous intensity after 1000 hours. ④  All tested sample passed. ⑤  Specifications are subject to change without notice.